Recently, TCL CSOT and Luohuaxin have successively obtained Micro LED patents, involving chip transfer, AR/VR full-color display technology, etc.
TCL CSOT has obtained a patent for a transfer device and transfer method for Micro LED wafers.
On December 31, 2024, according to information from the State Intellectual Property Office, TCL CSOT Technology Co., Ltd. obtained a patent entitled "Transfer Device and Transfer Method for Micro LED Chips", with authorization announcement number CN114695624B and application date in March 2022.
Image source: National Intellectual Property Administration
This invention provides a Micro LED wafer transfer device and transfer method, comprising: a machine for carrying and conveying a target substrate; a temporary substrate for temporarily carrying the Micro LED wafer; a spiked wheel including at least three spikes for detaching the Micro LED wafer from the temporary substrate and transferring it to the target substrate; and a pulley for conveying the temporary substrate.
During the Micro LED wafer transfer process, the spiked wheel and the pulley are located above the machine platform and on the side of the temporary substrate facing away from the Micro LED wafer. By employing the transfer apparatus and method provided by this invention, the Micro LED wafers can be transferred at a transfer efficiency of millions of wafers per hour, thereby improving the transfer efficiency of Micro LED wafers, increasing the production efficiency of Micro LED displays, and reducing production costs.
Luo Huaxin obtains patent for AR/VR full-color Micro LED display device and its manufacturing method.
On December 31, 2024, the State Intellectual Property Office announced that Luo Huaxin Display Technology Development (Jiangsu) Co., Ltd. obtained a patent entitled "An AR/VR Full-Color Micro LED Display Device and Its Preparation Method", with authorization announcement number CN118969937B and application date in October 2024.
Image source: National Intellectual Property Administration
This invention relates to an AR/VR full-color Micro-LED display device and its fabrication method, belonging to the field of semiconductor display technology. In the fabrication method of the AR/VR full-color Micro-LED display device of this application, a first protective layer, a second protective layer, and a third protective layer are stacked, with the density of the second protective layer being greater than the density of the first protective layer, and the density of the side of the second protective layer adjacent to the first protective layer being less than the density of the other side of the second protective layer, with a density difference of 0.6-1.5 g/cm³.
The density of the third protective layer is greater than the density of the other side of the second protective layer. By setting the density of the second protective layer to gradually change, the density of the second protective layer is gradually increased, which effectively protects the first protective layer. At the same time, it increases the rigidity of the outer surface of the second protective layer and the rigidity of the third protective layer is even greater. Thus, it effectively protects the Micro-LED chip in subsequent transfer processes and during use.
