Recently, Changhong's subsidiaries, Qiruike, Sitan Technology, and Xiamen Future Display Technology Research Institute, announced their latest Micro LED patents, covering topics such as improving the brightness of Micro LED red light, simplifying the Micro LED structure to improve brightness, and achieving low-cost full-color display.
Qiruike: Micro-LED and Micro-QLED hybrid projection technology overcomes the problem of red light brightness.
On November 8th, Sichuan Qiruike Technology Co., Ltd., a subsidiary of Changhong, announced that it had obtained a patent entitled "Hybrid Projection Optical Device Based on Micro-LED and Micro-QLED", publication number CN221960401U. This technology will not only change the design of traditional projection equipment, but also effectively solve the problem of insufficient red light brightness faced by many current projection technologies.
Image source: State Intellectual Property Office
The core of this patent lies in the hybrid use of Micro-LED and Micro-QLED display technologies. Micro-LED is known for its high brightness and wide color gamut, while Micro-QLED is widely recognized for its excellent color performance and higher pixel density. With the help of the X-Cube color combining prism, Sichuan Qiruike has achieved efficient color combination, especially in improving red light brightness, forming a more complete light source solution.
Specifically, in this projection optics design, the green Micro-LED microdisplay faces the light inlet of the projection lens, while the blue Micro-LED and red Micro-QLED are arranged at 90-degree angles to the green Micro-LED. This arrangement is not accidental, but a well-thought-out engineering design that combines the advantages of both technologies. It effectively reduces light loss in the red light, thus significantly improving red light brightness, especially when displaying images with vibrant colors. This is particularly noticeable in outdoor and bright environments, better meeting users' needs under various lighting conditions.
Sitan Technology: Simplifying Micro LED Light-Emitting Structure and Improving Photovoltaic Efficiency <br /> According to information from the State Intellectual Property Office, Shenzhen Sitan Technology Co., Ltd. has applied for a patent entitled "Micro-LED Light-Emitting Structure and its Manufacturing Method and Electronic Equipment", publication number CN118919614A, with an application date of August 2024.
Image source: State Intellectual Property Office
The patent abstract shows that this application provides a method for fabricating a Micro LED light-emitting structure, a Micro LED light-emitting structure, and an electronic device. The fabrication method includes: growing a buffer layer and an epitaxial layer on a substrate; forming a mask passivation layer on the epitaxial layer; dry etching the mask passivation layer to form multiple pixel spaces and multiple pixel isolation portions; sequentially forming a quantum well light-emitting layer, an electron confinement layer, and a current diffusion layer on the etched mask passivation layer; and applying a wet etching process to etch the pixel isolation portions until the epitaxial layer is exposed, resulting in a stepped pixel structure with intact sidewalls formed in the pixel spaces. The Micro LED light-emitting structure fabricated by the method of this application has intact sidewalls, improved photoelectric efficiency, and the method also simplifies the fabrication process of the light-emitting structure.
Xiamen Future Display Technology Research Institute: Saving wafer area to achieve full-color Micro LED
On November 11, according to information from the State Intellectual Property Office, Xiamen Future Display Technology Research Institute Co., Ltd. applied for a patent entitled "A Micro-LED chip with stacked layers and its manufacturing method", with publication number CN118919622A and application date of September 2024.
Image source: State Intellectual Property Office
The patent abstract shows that the present invention provides a stacked Micro-LED wafer and its fabrication method. Utilizing a stepped stacking technique, each P-type semiconductor layer has an electrode access area on its respective stepped surface. This allows for independent driving of the first, second, and third light-emitting structures, while maximizing wafer area savings to achieve full-color display and reducing production costs. Furthermore, the bonding of the P-type semiconductor layers of the first and second light-emitting structures via an insulating bonding layer avoids the incomplete etching caused by uneven bonding thickness during the bonding process of the polymer adhesive.
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