According to Projection Times, Jiangsu Tianjing Intelligent Equipment Co., Ltd. (hereinafter referred to as "Tianjing Intelligent Equipment") announced that its independently developed 12-inch sapphire substrate and carrier wafers have achieved mass production simultaneously, with an annual production capacity of 100,000 wafers and a yield rate of over 97%.
The 12-inch sapphire substrate produced this time has a diameter control precision of 300±0.5mm, a surface roughness of 0.2 nanometers, a dislocation density of ≤500 cm?2, and can withstand a high temperature of 2050℃, which can meet the manufacturing requirements of high-end devices such as GaN epitaxy and Micro LED.
The 12-inch sapphire substrate utilizes a proprietary ultra-high-speed diamond wire cutting technology (3000 meters/minute) and magnetron sputtering process to reduce the dislocation density of the epitaxial layer by 80%, thereby improving the luminous efficiency of LED chips.
Image source: Tianjing Intelligent Equipment
According to available information, Tianjing Intelligent Equipment was founded in Shenzhen in 2015, focusing on the field of intelligent equipment from the outset. In 2019, the company established its production headquarters in Xuzhou. In 2024, to expand its scale, the factory was moved to Huai'an, and a branch was established in Shuitou Town, Fujian Province, in the same year, completing its nationwide layout. (Compiled)
